ESD and Latch Up Damage, Issues with Si-Ge devices

ESD and Latch Up Damage, Issues with Si-Ge devices image #1
Electrostatic  discharge  (ESD)  tests  to  IEC  61000-4-2  at  more  than  ±4  kilovolts  (kV)  reliably  caused permanent  damage  to  Silicon-Germanium  (Si-Ge)  integrated  circuits  (ICs)  in a  range  of  microwave wireless datacommunication products.
‘Latch-Up’ caused by power rail undershoot appeared to be the cause of the problem, and a reliable solution was found.Neither  this  failure  mode  in  Si-Ge  devices,  nor  the  solution  presented  here,  has  –  to the  author’s knowledge – been previously reported.
Si-Ge  device  technology  is  at  present  mostly  targeted  at  microwave  wireless  
applications,  which includes  the  Internet  of  Things  (IOT),  and  is  a  candidate  for  much  faster  digital  processing  in  the future.
Accordingly, in the near future, Si-Ge may well become a commonplace technology, and significant problems  caused  by  the  latch-up  failure  mode  described  in  this  article  could  become  widespread,unless prevented by the use of the techniques described here, or other techniques.

« Back to EM Sectors

You are free to use this information on condition that you do not modify it in any way and always make it clear who was its original author and where it was published or posted.